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Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389312" target="_blank" >RIV/68378271:_____/12:00389312 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1109/TNS.2012.2197024" target="_blank" >http://dx.doi.org/10.1109/TNS.2012.2197024</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/TNS.2012.2197024" target="_blank" >10.1109/TNS.2012.2197024</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

  • Original language description

    Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties inCe:GAGG were studied. 5d-4f emission within 520?530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA202%2F08%2F0893" target="_blank" >GA202/08/0893: Novel materials and technologies for thick film scintillators</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    IEEE Transactions on Nuclear Science

  • ISSN

    0018-9499

  • e-ISSN

  • Volume of the periodical

    59

  • Issue of the periodical within the volume

    5

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    4

  • Pages from-to

    2112-2115

  • UT code for WoS article

    000310143300015

  • EID of the result in the Scopus database