Structuring of diamond films by reactive ion plasma etching

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389420" target="_blank" >RIV/68378271:_____/12:00389420 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Structuring of diamond films by reactive ion plasma etching
Original language description
In this study, two common strategies of diamond film structuring are described. Main focus is on the comparison of top-down and the bottom-up strategies. The top-down strategy is primary related to dry reactive ion etching through masking materials (or even without mask), while bottom-up strategy is based on selective area deposition of diamond film. Several methods of both strategies are demonstrated in details in the article, regarding to their properties and basic principles.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Nanomateriály a nanotechnologie ve stavebnictví 2012 (NaNS 2012)
ISBN
978-80-01-05132-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
35-40
Publisher name
ČVUT
Place of publication
Praha
Event location
Praha
Event date
Sep 11, 2012
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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