Etching effects of low temperature hydrogen plasma on encapsulated diamond transistors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00390080" target="_blank" >RIV/68378271:_____/12:00390080 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Etching effects of low temperature hydrogen plasma on encapsulated diamond transistors

Original language description

We study etching effects of low temperature hydrogen plasma treatment (200?300 $C) in two different microwave plasma reactors (linear and focused plasma) on diamond solutiongated field-effect transistors with various polymers for encapsulation (MA-P, OFPR, SU8). Three-dimensional transistor microstructures (20 ?m) are grown from nanocrystalline H-terminated intrinsic diamond byMW-CVD on Si/SiO2 substrates.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta Universitatis Carolinae. Mathematica et Physica

ISSN

0001-7140

e-ISSN

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Volume of the periodical

53

Issue of the periodical within the volume

2

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

7

Pages from-to

97-103

UT code for WoS article

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EID of the result in the Scopus database

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