Etching Effects of Low Temperature Hydrogen Plasma on Encapsulated Diamond Transistors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00200580" target="_blank" >RIV/68407700:21340/12:00200580 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Etching Effects of Low Temperature Hydrogen Plasma on Encapsulated Diamond Transistors

Original language description

We study etching effects of low temperature hydrogen plasma treatment (200-300°C) in two different microwave plasma reactors (linear and focused plasma) on diamond solution-gated field-effect transistors with various polymers for encapsulation (MA-P, OFPR, SU8). Three-dimensional transistor microstructures (20um) are grown from nanocrystalline H-terminated intrinsic diamond by MW-CVD on Si/SiO2 substrates.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů