Functionalization of silicon crystal surface by energetic cluster ion bombardment
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00390624" target="_blank" >RIV/68378271:_____/12:00390624 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/12:00390624
Result on the web
<a href="http://dx.doi.org/10.1166/jnn.2012.6782" target="_blank" >http://dx.doi.org/10.1166/jnn.2012.6782</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1166/jnn.2012.6782" target="_blank" >10.1166/jnn.2012.6782</a>
Alternative languages
Result language
angličtina
Original language name
Functionalization of silicon crystal surface by energetic cluster ion bombardment
Original language description
We report the creation of a functional nanostructure on a Si crystal surface by 200 keV C60++ cluster ion bombardment (CIB). We found that the modified layer produced by CIB includes two sublayers.The top 24-nm-thick sublayer is an agglomeration of 5-nm-sized amorphous Si nanodots (a-Si NDs). The deeper 10-nm-thick sublayer is a transient layer of disordered Si as an interface between the a-Si top sublayer and the bulk Si(100). The top a-Si sublayer and the nc-Si transient layer are formed by the localheating effect and shock wave effect, respectively,induced by the cluster ion impacts. The photoluminescence (PL) spectra revealed an emission line centered at a photon energy of 1.92 eV. The absorption spectra of the modified samples exhibit enhanced light absorption at this photon energy. The parameters of the PL line require ascribing the emission origin to the quantum-confinement-induced optical transitions in the a-Si nanodots.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Nanoscience and Nanotechnology
ISSN
1533-4880
e-ISSN
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Volume of the periodical
12
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
9136-9141
UT code for WoS article
000315172400041
EID of the result in the Scopus database
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