Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00395956" target="_blank" >RIV/68378271:_____/13:00395956 - isvavai.cz</a>

Alternative codes found

RIV/61389005:_____/13:00395956

Result on the web

<a href="http://dx.doi.org/10.1016/j.vacuum.2013.05.017" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2013.05.017</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2013.05.017" target="_blank" >10.1016/j.vacuum.2013.05.017</a>

Result language

angličtina

Original language name

Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

Original language description

We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surfaceof a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

—

Volume of the periodical

98

Issue of the periodical within the volume

SI

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

49-55

UT code for WoS article

000322805900011

EID of the result in the Scopus database

—