Generation of periodic structures on SiC upon laser plasma XUV/NIR radiations

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00398757" target="_blank" >RIV/68378271:_____/13:00398757 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/13:00208384
Result on the web
<a href="http://dx.doi.org/10.1017/S026303461300058X" target="_blank" >http://dx.doi.org/10.1017/S026303461300058X</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1017/S026303461300058X" target="_blank" >10.1017/S026303461300058X</a>

Result language
angličtina
Original language name
Generation of periodic structures on SiC upon laser plasma XUV/NIR radiations
Original language description
Surface periodic structures are generated upon irradiation of a silicon carbide (SiC) thin film by the plasma produced by 40 fs pulses from a Ti:Sapphire laser focused onto a thick low density polyethylene (LDPE) foil facing the SiC film. Independently of the number of laser pulses applied, these structures, with average regular periodicity of 710 nm, are evident throughout all irradiated areas. We attribute their formation to the efficient coupling of the unfocused femtosecond laser pulse with the incoherent extreme ultraviolet component of the laser-generated LDPE plasma.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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