Advanced modeling for optical characterization of amorphous hydrogenated silicon films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00424989" target="_blank" >RIV/68378271:_____/13:00424989 - isvavai.cz</a>
Alternative codes found
RIV/00216224:14740/13:00071634
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2013.04.129" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.04.129</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2013.04.129" target="_blank" >10.1016/j.tsf.2013.04.129</a>

Result language
angličtina
Original language name
Advanced modeling for optical characterization of amorphous hydrogenated silicon films
Original language description
Amorphous hydrogenated silicon (a-Si:H) films deposited on glass and crystalline silicon substrates are analyzed using a multi-sample method combining ellipsometry and spectrophotometry in a spectral range of 0.046?8.9 eV, utilizing an analytical dispersion model based on parametrization of joint density of states and application of sum rule. This model includes all absorption processes from phonon absorption to core electron excitations. It is shown that if films deposited on both substrates are characterized together it is possible to study both phonon absorption and weak absorption processes below the band gap, i.e. the Urbach tail and absorption on localized states.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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