Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00425133" target="_blank" >RIV/68378271:_____/13:00425133 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2006400" target="_blank" >http://dx.doi.org/10.1117/12.2006400</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2006400" target="_blank" >10.1117/12.2006400</a>

Result language
angličtina
Original language name
Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations
Original language description
Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20-21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and nonpolar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgK? radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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