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Ab initio density functional theory study of non-polar (10-10),?(11-20) and semipolar {20-21} GaN surfaces

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432522" target="_blank" >RIV/68378271:_____/14:00432522 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4879675" target="_blank" >http://dx.doi.org/10.1063/1.4879675</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4879675" target="_blank" >10.1063/1.4879675</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Ab initio density functional theory study of non-polar (10-10),?(11-20) and semipolar {20-21} GaN surfaces

  • Original language description

    The atomic structures of non-polar GaN(10 -10), (11 -20) and semipolar GaN(20 -21), (20 -2-1) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1x 1) structure with buckled Ga-N or Ga-Ga dimerswas found stable on the non-polar surfaces in agreement with previous works. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN{20 -21} surfaces consist of non-polar and semipolar nano-facets. The stability of the surfaces with nano-facets was analyzed.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    115

  • Issue of the periodical within the volume

    20

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    5

  • Pages from-to

    "203508-1"-"203508-5"

  • UT code for WoS article

    000337143500024

  • EID of the result in the Scopus database