On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00427003" target="_blank" >RIV/68378271:_____/14:00427003 - isvavai.cz</a>
Result on the web
<a href="http://www.sciencedirect.com/science/article/pii/S0927024813006016" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0927024813006016</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.solmat.2013.11.017" target="_blank" >10.1016/j.solmat.2013.11.017</a>

Result language
angličtina
Original language name
On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells
Original language description
The hydrogen plasma passivation of thin film polycrystalline silicon (pc-Si) was investigated in conjunction with plasma texturing proces to make efficient heterojunction solar cells. Combining plasma pre-texturing with high-temperature hydrogenation, the best 2 ?m-thick pc-Si heterojunction solar cell reaches an efficiency of 8.54%.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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