Low temperature diamond growth

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432021" target="_blank" >RIV/68378271:_____/14:00432021 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1039/9781849737616-00290" target="_blank" >http://dx.doi.org/10.1039/9781849737616-00290</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/9781849737616-00290" target="_blank" >10.1039/9781849737616-00290</a>

Result language
angličtina
Original language name
Low temperature diamond growth
Original language description
The present chapter focuses on the low temperature diamond growth from technological and practical point of view. The LTDG process is divided in two strategies based i) on the modification of the deposition systems and ii) on the change of gas chemistry.State of the art of each strategy and involved fundamental growth processes are reviewed. Among the discussed diamond growth processes, microwave surface wave plasma in linear antenna configuration with oxygen containing gas mixture is shown as the mostpromising process for the LTDG over large areas with high optical and electronic grade material. The growth phenomena observed in the linear antenna microwave plasma provide a simple way to control nano- and poly-crystalline diamond character. A practical comparison between focused and linear antenna microwave plasma is presented on several key studies which utilize the LTDG on amorphous silicon, glass, germanium and optical elements used for IR spectroscopy.
Czech name
—
Czech description
—

Project
<a href="/en/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Preparation, modification and characterization of materials by radiation</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)