Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432311" target="_blank" >RIV/68378271:_____/14:00432311 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4882072" target="_blank" >http://dx.doi.org/10.1063/1.4882072</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4882072" target="_blank" >10.1063/1.4882072</a>
Alternative languages
Result language
angličtina
Original language name
Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1-xSbx/AlSb deep quantum well
Original language description
We report on superlinear electroluminescent structures based on AlSb/InAs1-xSbx/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Study of the EL temperature dependence at 90?300K range enabled us to define the role of the first and secondheavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
115
Issue of the periodical within the volume
22
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
"223102-1"-"223102-5"
UT code for WoS article
000337891800002
EID of the result in the Scopus database
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