Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00399966" target="_blank" >RIV/68378271:_____/13:00399966 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Growth of deep InAsSb electron QW with AlSb barriers on GaSb substrate
Original language description
Superlinear electroluminescence with anomalous temperature dependence was observed on GaSb based structures with AlSb barriers and deep InAsSb quantum well. Reflectance anisotropy spectroscopy was used for in situ growth checking. High energy AlSb barriers should provide electrons with sufficient energy for impact ionization in InAsSb QW. Suggested AlAs like interfaces should improve the hole localization in shallow valence band QW. The electroluminescence results of our deep QW GaSb based structure suggest, that the carrier multiplication effect due to impact ionization may take place at the Al(As)Sb/InAsSb heterointerface. This occurs due to a large band offset at the interface exceeding ionization threshold energy for electrons in the narrow-gap well. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers), as well as for photovoltaic elements.
Czech name
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Czech description
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Project
<a href="/en/project/GA13-15286S" target="_blank" >GA13-15286S: GaSb based nano-heterostructures with deep quantum well</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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