MOVPE prepared AlSb/InAsSb/AlSb deep quantum well structures used for the two-band superlinear luminescence
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455037" target="_blank" >RIV/68378271:_____/15:00455037 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
MOVPE prepared AlSb/InAsSb/AlSb deep quantum well structures used for the two-band superlinear luminescence
Original language description
AlSb/InAsSb/AlSb samples with three different Sb concentrations in InAsSb QW were prepared by MOVPE. These QW structures with intensive two-band electroluminescence were measured in the photon energy range of 0.5 - 0.8 eV under 20-200 mA drive current attemperatures 77 K and from 22°C up to 180°C. The impact ionization by the electrons heated at AlSb/QW interface was observed. Two-band superlinear electroluminescence with the highest intensity near 375 K occurs. Presented results for the light-emittingdiodes with deep InAsSb QW pave the way for mid-IR devices operating in wide temperature range from ?200°C up to +200°C.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů