MIR LED-like structures with high temperature superlinear luminescence
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00463669" target="_blank" >RIV/68378271:_____/16:00463669 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
MIR LED-like structures with high temperature superlinear luminescence
Original language description
AlSb/InAsSb/AlSb based heterostructures and nanostructures with quantum wells (QWs) grown on GaSb are promising materials for the optoelectronic devices for near- and mid-IR spectral regions. GaSb-based structures with a deep AlSb/InAsSb/AlSb QW were prepared. The impact ionization by the electrons heated at AlSb/QW interface was observed. Two-band superlinear electroluminescence with the highest intensity near 375 K occurs. Presented results for the light-emitting diodes with deep InAsSb QW pave the way for mid-IR devices operating in wide temperature range from –200 C up to +200°C.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů