Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F10%3A00342123" target="_blank" >RIV/68378271:_____/10:00342123 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

Original language description

Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 ?m.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductors

ISSN

1063-7826

e-ISSN

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Volume of the periodical

44

Issue of the periodical within the volume

1

Country of publishing house

RU - RUSSIAN FEDERATION

Number of pages

6

Pages from-to

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UT code for WoS article

000273980800010

EID of the result in the Scopus database

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