Photothermally stimulated creation of electron and hole centers in Ce3+-doped Y2SiO5 single crystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432353" target="_blank" >RIV/68378271:_____/14:00432353 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2013.12.018" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2013.12.018</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2013.12.018" target="_blank" >10.1016/j.optmat.2013.12.018</a>

Result language
angličtina
Original language name
Photothermally stimulated creation of electron and hole centers in Ce3+-doped Y2SiO5 single crystals
Original language description
The origin and characteristics of afterglow-related processes are studied in Ce3+-doped yttrium oxyorthosilicate single crystals. The dependences of the afterglow and TSL intensities on the irradiation energy, temperature and duration are measured. The afterglow and TSL spectra of the UV-irradiated crystals are compared with their photoluminescence spectra.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GAP204%2F12%2F0805" target="_blank" >GAP204/12/0805: Advanced material solutions for thin film scintillators and light transformers</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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