Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00501249" target="_blank" >RIV/68378271:_____/18:00501249 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2017.10.054" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2017.10.054</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2017.10.054" target="_blank" >10.1016/j.optmat.2017.10.054</a>
Alternative languages
Result language
angličtina
Original language name
Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals
Original language description
Luminescence characteristics of Ce3þ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents(x = 1, 2, 3, 4, 5) are studied in the 9-500 K temperature range. The spectra of the afterglow, photoluminescence,radioluminescence, and thermally stimulated luminescence (TSL) of each crystal coincide. The increase of the Ga content results in the high-energy shift of the spectra while the radioluminescence intensity at 9 K remains practically constant up to x = 4. No Ce3+ emission is observed in case of x = 5. The total TSL intensity drastically increases, reaches the maximum value around x = 2-3, and then decreases due to the thermal quenching of the Ce3+ emission. The TSL glow curve maxima are gradually shifting to lower temperatures, and the dependence of the maxima positions and the corresponding trap depths on the Ga content is close to linear.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA16-15569S" target="_blank" >GA16-15569S: Fast thin film scintillators for high resolution 2D-imaging</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optical Materials
ISSN
0925-3467
e-ISSN
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Volume of the periodical
75
Issue of the periodical within the volume
Jan
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
331-336
UT code for WoS article
000423890300047
EID of the result in the Scopus database
2-s2.0-85032827047