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Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00501249" target="_blank" >RIV/68378271:_____/18:00501249 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.optmat.2017.10.054" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2017.10.054</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.optmat.2017.10.054" target="_blank" >10.1016/j.optmat.2017.10.054</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of Ga content on luminescence and defects formation processes in Gd3(Ga,Al)5O12:Ce single crystals

  • Original language description

    Luminescence characteristics of Ce3þ - doped Gd3GaxAl5-xO12 single crystals with different Ga contents(x = 1, 2, 3, 4, 5) are studied in the 9-500 K temperature range. The spectra of the afterglow, photoluminescence,radioluminescence, and thermally stimulated luminescence (TSL) of each crystal coincide. The increase of the Ga content results in the high-energy shift of the spectra while the radioluminescence intensity at 9 K remains practically constant up to x = 4. No Ce3+ emission is observed in case of x = 5. The total TSL intensity drastically increases, reaches the maximum value around x = 2-3, and then decreases due to the thermal quenching of the Ce3+ emission. The TSL glow curve maxima are gradually shifting to lower temperatures, and the dependence of the maxima positions and the corresponding trap depths on the Ga content is close to linear.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/GA16-15569S" target="_blank" >GA16-15569S: Fast thin film scintillators for high resolution 2D-imaging</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Optical Materials

  • ISSN

    0925-3467

  • e-ISSN

  • Volume of the periodical

    75

  • Issue of the periodical within the volume

    Jan

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

    331-336

  • UT code for WoS article

    000423890300047

  • EID of the result in the Scopus database

    2-s2.0-85032827047