Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00440680" target="_blank" >RIV/68378271:_____/14:00440680 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s
Original language description
Microcrystalline silicon thin-film solar cells were deposited by VHF-PECVD at 140 MHz with absorber layer deposition rates up to 2.5 nm/s by a combination of very high plasma excitation frequencies (140 MHz) and high power high pressure deposition. The homogeneity of the deposition is ensured by the linear plasma source concept combined with a dynamic deposition process (moving substrates). High efficiencies of 9.3 % (9.6 % with AR coating) have been achieved at a deposition rate of 0.8 nm/s. At higherdeposition rates (2.5 nm/s) the efficiency drops to 8.3 % (8.6 % with AR coating) although the absorber layer defect density is equal to the low rate material as was measured by PDS/FTPS. On the other hand the high rate material exhibits a pronounced crack formation in the absorber layer as was observed in SEM cross section images. This study investigates in how far the effect of cracks can be mitigated by different approaches, e.g. using ?c-SiOx doped layers.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 29th European Photovoltaic Energy Conference and Exhibition
ISBN
3-936338-34-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1917-1920
Publisher name
WIP
Place of publication
Berlin
Event location
Amsterdam
Event date
Sep 22, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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