SiC graphene FET with polydimethylglutharimide as a gate dielectric layer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00440959" target="_blank" >RIV/68378271:_____/14:00440959 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
SiC graphene FET with polydimethylglutharimide as a gate dielectric layer
Original language description
We present our results of using MicroChem Lift-Off Resist (LOR) layer as a dielectric layer for SiC graphene FETs. LOR resist is based on polydimethylglutharimide. Its unique properties enable to perform exceptionally well resolution imaging, easy process tuning, high yields and superior deposition line width control.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
ISBN
978-1-4799-5474-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
33-36
Publisher name
Slovak University of Technology
Place of publication
Bratislava
Event location
Smolenice
Event date
Oct 20, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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