An experimental-theoretical atomic-scale study–In situ analysis of III-Von Si(100) growth for hybrid solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00485615" target="_blank" >RIV/68378271:_____/14:00485615 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/PVSC.2014.6925510" target="_blank" >http://dx.doi.org/10.1109/PVSC.2014.6925510</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/PVSC.2014.6925510" target="_blank" >10.1109/PVSC.2014.6925510</a>
Alternative languages
Result language
angličtina
Original language name
An experimental-theoretical atomic-scale study–In situ analysis of III-Von Si(100) growth for hybrid solar cells
Original language description
We consider GaP/Si(100) as quasi-substrate for III-V-on-silicon growth targeting solar energy exploration in dualnjunction devices for both photovoltaics as well as photoelectrochemical tandem diodes with optimum bandgaps.nWe prepare Si(100) surfaces with majority domains of either type, grow thin GaP layers free of anti-phase disorder, find that abrupt Si-P interfaces are favored over abrupt Si-Ga interfaces and, finally, observe an RAS signal attributed to N incorporation in GaPN/Si(100). Combining in situ reflection anisotropy spectroscopy during metalorganic vapor phase epitaxy with UHV-based surface techniques and ab initio DFT calculations, we aim to understand the interface formation at the atomic scale.n
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
IEEE Photovoltaic Specialist Conference (PVSC) /40./
ISBN
978-1-4799-4398-2
ISSN
0160-8371
e-ISSN
—
Number of pages
3
Pages from-to
2797-2799
Publisher name
IEEE
Place of publication
New York
Event location
Denver
Event date
Jun 8, 2014
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000366638903010