Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00562785" target="_blank" >RIV/68378271:_____/22:00562785 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2022.154630" target="_blank" >https://doi.org/10.1016/j.apsusc.2022.154630</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2022.154630" target="_blank" >10.1016/j.apsusc.2022.154630</a>

Result language
angličtina
Original language name
Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams
Original language description
The epitaxial growth of the polar GaP(100) on the nonpolar Si(100) substrate suffers from inevitable defects at the antiphase domain boundaries, resulting from mono-atomic steps on the Si(100) surface. Stabilization of Si(100) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, GaP epitaxial films were grown on As-terminated Si(100) substrates by MOVPE. The GaP(As)/Si(100) heterostructures were investigated by XPS, GCIB, HAXPES. We found residuals of As atoms in the GaP lattice and a localization of As atoms at the GaP(As)/Si(100) interface. Deconvolution of core level peaks revealed interface core level shifts. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the heterostructure was deduced.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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