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Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00547617" target="_blank" >RIV/68378271:_____/21:00547617 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.150514</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >10.1016/j.apsusc.2021.150514</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures

  • Original language description

    GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing hard X-ray photoelectron spectroscopy (HAXPES). GaP(001) epitaxial films with thicknesses between 4 - 50 nm are prepared by metalorganic vapor phase epitaxy on either predominantly single-domain (SD) or two-domain (TD) Si(001) surfaces. We reveal core level shifts of the P 2p and Si 2p peaks near the interface as well as core level shifts in the Ga 3d peaks near the surface. We suggest an Inter-Diffused Layer (IDL) model of the GaP/Si(001) interfacial structure with Si-P bonds at the heterointerface and residual P atoms in the Si substrate. Using a newly developed Parametrized Polynomial Function (PPF) approach, we derive a non-monotonic band bending profile in the heterostructures, correct experimental valence band offsets implying interfacial electronic barriers, and determine valence band discontinuities at GaP/Si(001) interfaces.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

    1873-5584

  • Volume of the periodical

    565

  • Issue of the periodical within the volume

    Nov.

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    13

  • Pages from-to

    150514

  • UT code for WoS article

    000681219900001

  • EID of the result in the Scopus database

    2-s2.0-85109444736