Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00547617" target="_blank" >RIV/68378271:_____/21:00547617 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >https://doi.org/10.1016/j.apsusc.2021.150514</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2021.150514" target="_blank" >10.1016/j.apsusc.2021.150514</a>
Alternative languages
Result language
angličtina
Original language name
Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures
Original language description
GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing hard X-ray photoelectron spectroscopy (HAXPES). GaP(001) epitaxial films with thicknesses between 4 - 50 nm are prepared by metalorganic vapor phase epitaxy on either predominantly single-domain (SD) or two-domain (TD) Si(001) surfaces. We reveal core level shifts of the P 2p and Si 2p peaks near the interface as well as core level shifts in the Ga 3d peaks near the surface. We suggest an Inter-Diffused Layer (IDL) model of the GaP/Si(001) interfacial structure with Si-P bonds at the heterointerface and residual P atoms in the Si substrate. Using a newly developed Parametrized Polynomial Function (PPF) approach, we derive a non-monotonic band bending profile in the heterostructures, correct experimental valence band offsets implying interfacial electronic barriers, and determine valence band discontinuities at GaP/Si(001) interfaces.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Volume of the periodical
565
Issue of the periodical within the volume
Nov.
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
13
Pages from-to
150514
UT code for WoS article
000681219900001
EID of the result in the Scopus database
2-s2.0-85109444736