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Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00535112" target="_blank" >RIV/68378271:_____/20:00535112 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1002/sia.6829" target="_blank" >https://doi.org/10.1002/sia.6829</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/sia.6829" target="_blank" >10.1002/sia.6829</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

  • Original language description

    We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2 miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Surface and Interface Analysis

  • ISSN

    0142-2421

  • e-ISSN

  • Volume of the periodical

    52

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    6

  • Pages from-to

    933-938

  • UT code for WoS article

    000544119700001

  • EID of the result in the Scopus database

    2-s2.0-85087168251