InGaN/GaN multiple quantum well structures for scintillator application
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00455030" target="_blank" >RIV/68378271:_____/15:00455030 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
InGaN/GaN multiple quantum well structures for scintillator application
Original language description
Scintillator InGaN/GaN QW structure was prepared by MOVPE. The structure reported is a promising candidate for fast scintillator applications: the scintillation response characteristics are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. The radioluminescence decay time decreased 4 times from 16 ns to 4 ns when the QW thickness was decreased from 2.4 nm to 2 nm.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů