Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456404" target="_blank" >RIV/68378271:_____/15:00456404 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1021/acs.nanolett.5b00448" target="_blank" >http://dx.doi.org/10.1021/acs.nanolett.5b00448</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.nanolett.5b00448" target="_blank" >10.1021/acs.nanolett.5b00448</a>

Result language
angličtina
Original language name
Interplay between switching driven by the tunneling current andatomic force of a bistable four-atom Si quantum dot
Original language description
We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their statesusing versatile combined AFM/STM will contribute to further miniaturization of nanodevices
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GA14-02079S" target="_blank" >GA14-02079S: Control of single electron charge states in molecules on surfaces</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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