Electronic and chemical properties of donor, acceptor centers in graphene
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00456407" target="_blank" >RIV/68378271:_____/15:00456407 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1021/acsnano.5b03690" target="_blank" >http://dx.doi.org/10.1021/acsnano.5b03690</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.5b03690" target="_blank" >10.1021/acsnano.5b03690</a>
Alternative languages
Result language
angličtina
Original language name
Electronic and chemical properties of donor, acceptor centers in graphene
Original language description
Chemical doping is one of the most suitable ways of tuning the electronic properties of graphene and a promising candidate for a band gap opening. In this work we report a reliable and tunable method for preparation of high-quality boron and nitrogen co-doped graphene on silicon carbide substrate. We combine experimental (dAFM, STM, XPS, NEXAFS) and theoretical (total energy DFT and simulated STM) studies to analyze the structural, chemical, and electronic properties of the single-atom substitutional dopants in graphene. We show that chemical identification of boron and nitrogen substitutional defects can be achieved in the STM channel due to the quantum interference effect, arising due to the specific electronic structure of nitrogen dopant sites. Chemical reactivity of single boron and nitrogen dopants is analyzed using force?distance spectroscopy by means of dAFM.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
13
Pages from-to
9180-9187
UT code for WoS article
000361935800056
EID of the result in the Scopus database
2-s2.0-84942288107