Transformation of metallic boron into substitutional dopants in graphene on 6H-SiC(0001)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10333700" target="_blank" >RIV/00216208:11320/16:10333700 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=NKNWWxN0hb" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=NKNWWxN0hb</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.93.041302" target="_blank" >10.1103/PhysRevB.93.041302</a>

Result language
angličtina
Original language name
Transformation of metallic boron into substitutional dopants in graphene on 6H-SiC(0001)
Original language description
We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H-SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely, boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the pi electron system of graphene by the presence of the pi* resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the BK-edge. The experimental findings are supported by NEXAFS simulations.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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