Transformation of metallic boron into substitutional dopants in graphene on 6H-SIC(0001)

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458959" target="_blank" >RIV/68378271:_____/16:00458959 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.93.041302" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.93.041302</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.93.041302" target="_blank" >10.1103/PhysRevB.93.041302</a>

Result language
angličtina
Original language name
Transformation of metallic boron into substitutional dopants in graphene on 6H-SIC(0001)
Original language description
We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H-SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely, boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the pi electron system of graphene by the presence of the pi* resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the BK-edge. The experimental findings are supported by NEXAFS simulations.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GA15-07172S" target="_blank" >GA15-07172S: Charge and spin doping of graphene by substitutional impurities: theory and experiment</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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