An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00458644" target="_blank" >RIV/68378271:_____/16:00458644 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/16:00458644 RIV/44555601:13440/16:43887606
Result on the web
<a href="http://dx.doi.org/10.1088/0741-3335/58/2/025011" target="_blank" >http://dx.doi.org/10.1088/0741-3335/58/2/025011</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0741-3335/58/2/025011" target="_blank" >10.1088/0741-3335/58/2/025011</a>

Result language
angličtina
Original language name
An unconventional ion implantation method for producing Au and Si nanostructures using intense laser-generated plasmas
Original language description
The present paper describes measurements of ion implantation by high-intensity lasers in an innovative configuration. The ion acceleration and implantation were performed using the target normal sheath acceleration regime. Highly ionized charged ions were generated and accelerated by the self-consistent electrostatic accelerating field at the rear side of a directly illuminated foil surface. A sub-nanosecond pulsed laser operating at an intensity of about 10(16) W cm(-2) was employed to irradiate thin foils containing Au atoms. Multi-energy and multi-species ions with energies of the order of 1 MeV per charge state were implanted on exposed substrates of monocrystalline silicon up to a concentration of about 1% Au atoms in the first superficial layers. nThe target, laser parameters and irradiation conditions play a decisive role in the dynamic control of the characteristics of the ion beams to be implanted. The ion penetration depth, the depth profile, the integral amount of implanted ions and the concentration-depth profiles were determined by Rutherford back-scattering analysis. Ion implantation produces Si nanocrystals and Au nanoparticles and induces physical and chemical modifications of the implanted surfaces.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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