Very smooth FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 layers prepared by modified PLD

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469322" target="_blank" >RIV/68378271:_____/16:00469322 - isvavai.cz</a>

Alternative codes found

RIV/61389013:_____/16:00469322 RIV/68407700:21460/16:00237810

Result on the web

<a href="http://dx.doi.org/10.1007/s11664-015-4295-2" target="_blank" >http://dx.doi.org/10.1007/s11664-015-4295-2</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-015-4295-2" target="_blank" >10.1007/s11664-015-4295-2</a>

Result language

angličtina

Original language name

Very smooth FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 layers prepared by modified PLD

Original language description

We report on the preparation of thermoelectric layers of FeSb2Te and Ce0.1Fe0.7Co3.3Sb12 on silicon (100) and fused silica substrates via a combination of pulsed laser deposition (PLD) and rapid thermal annealing methods. A wide range of deposition conditions were tested including on-and off-axis approaches and variation of the annealing temperature profile. Wavelength dispersive x-ray spectroscopy was used to determine stoichiometry. An optical microscope, mechanical profilometer, and atomic force microscopy served to map layer topology. For the FeSb2Te layers, Sa was between 1.4 nm and 6 nm, with Sq ranging from 2.1 nm to 7.8 nm. For Ce0.1Fe0.7Co3.3Sb12 layers, Sa was from 1.3 nm to 4.2 nm and Sq between 1.7 nm and 6.2 nm. Crystalline structure was determined by x-ray diffraction. The best layers (in terms of smooth surface and crystalline structure) prepared using a modified off-axis PLD arrangement were then characterized for thermoelectric properties.

Czech name

—

Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

<a href="/en/project/GA13-33056S" target="_blank" >GA13-33056S: Characterization of thin thermoelectric layers and mutilayered structures by scanning thermal microscope and Harman method.</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

—

Volume of the periodical

45

Issue of the periodical within the volume

3

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

1921-1926

UT code for WoS article

000371163400097

EID of the result in the Scopus database

2-s2.0-84959483340