Passivation effect of water vapour on thin film polycrystalline Si solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469471" target="_blank" >RIV/68378271:_____/16:00469471 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/pssa.201533006" target="_blank" >http://dx.doi.org/10.1002/pssa.201533006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201533006" target="_blank" >10.1002/pssa.201533006</a>
Alternative languages
Result language
angličtina
Original language name
Passivation effect of water vapour on thin film polycrystalline Si solar cells
Original language description
We investigated a passivation of both surface and bulk of polycrystalline silicon films by water vapour by Suns-VOC method to measure the open-circuit voltage. A sufficiently high temperature (350–450 °C) is necessary for a successful silicon passivation. Different gases were tested beside water vapour (H2, H2 + H2O, O2 + H2O, air) but none of them resulted in higher VOC than pure steam (360 mV from starting 220 mV). Results from Fourier transform infrared spectroscopy indicate that water vapour passivation is rather oxidation while hydrogen plays a significant supporting role in the process. Water vapour is able to passivate defects in the whole silicon volume, but its passivation effect is not strong enough to become an adequate alternative to the plasma hydrogenation with the best result of VOC ∼497 mV. On the other hand, it provides advantage of simplicity (no vacuum system and deionised water steam as the only input).
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica Status Solidi. A
ISSN
1862-6300
e-ISSN
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Volume of the periodical
213
Issue of the periodical within the volume
7
Country of publishing house
DE - GERMANY
Number of pages
6
Pages from-to
1969-1975
UT code for WoS article
000385222900048
EID of the result in the Scopus database
2-s2.0-84992299642