Scanning thermal microscopy of Bi2Te3 and Yb0.19Co4Sb12 thermoelectric films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00469656" target="_blank" >RIV/68378271:_____/16:00469656 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/16:00469519 RIV/61389013:_____/16:00469656 RIV/68407700:21460/16:00303849
Result on the web
<a href="http://dx.doi.org/10.1007/s00339-016-0017-8" target="_blank" >http://dx.doi.org/10.1007/s00339-016-0017-8</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s00339-016-0017-8" target="_blank" >10.1007/s00339-016-0017-8</a>

Result language
angličtina
Original language name
Scanning thermal microscopy of Bi2Te3 and Yb0.19Co4Sb12 thermoelectric films
Original language description
Thermal conductivity of thermoelectric Bi2Te3 and Yb0.19Co4Sb12 thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 degrees C.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/GA13-33056S" target="_blank" >GA13-33056S: Characterization of thin thermoelectric layers and mutilayered structures by scanning thermal microscope and Harman method.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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