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Resistive switch mechanism of Au/ZnO/Au crossbar structure

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471058" target="_blank" >RIV/68378271:_____/16:00471058 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Resistive switch mechanism of Au/ZnO/Au crossbar structure

  • Original language description

    In this paper, this resistive switch mechanism of the Au/ZnO/Au crossbar structure was investigated. Au has been considered as a good metallic electrode for its low oxygen affinity and high stability. Au/ZnO/Au crossbar was deposited using sputtering. The crossbar area size is 100 um2 with ZnO layer thickness ∼140 nm and Au electrodes layer ∼60 nm. The bipolar resistive switching behavior can be observed in our device, which the set voltage (VSET) and the reset voltage (VRESET) is -2.25V. By further electrical transport analysis, the space-charge-limited-current (SCLC) dominate the carrier transport in the high resistance state (HRS). On the other, low resistance (LRS) is follow the ohmic transport. Our resultnshows that the oxygen ion migration plays an important role in the resistive switch mechanism.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů