Resistive switch mechanism of Au/ZnO/Au crossbar structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471058" target="_blank" >RIV/68378271:_____/16:00471058 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Resistive switch mechanism of Au/ZnO/Au crossbar structure
Original language description
In this paper, this resistive switch mechanism of the Au/ZnO/Au crossbar structure was investigated. Au has been considered as a good metallic electrode for its low oxygen affinity and high stability. Au/ZnO/Au crossbar was deposited using sputtering. The crossbar area size is 100 um2 with ZnO layer thickness ∼140 nm and Au electrodes layer ∼60 nm. The bipolar resistive switching behavior can be observed in our device, which the set voltage (VSET) and the reset voltage (VRESET) is -2.25V. By further electrical transport analysis, the space-charge-limited-current (SCLC) dominate the carrier transport in the high resistance state (HRS). On the other, low resistance (LRS) is follow the ohmic transport. Our resultnshows that the oxygen ion migration plays an important role in the resistive switch mechanism.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GC16-10429J" target="_blank" >GC16-10429J: Optical, electrical and magnetical properties of ZnO nanostructures</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů