Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00479300" target="_blank" >RIV/68378271:_____/17:00479300 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Long range influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures

Original language description

GaN and InGaN/GaN heterostructures are promising materials for many optoelectronic devices, such as light emitters, high-power and high-frequency electronics, detectors of ionizing radiation, scintillators. Great attention has been paid to optimize growth parameters and decrease density of dislocations and defects in this material. A little outside attention remains study of macroscopic defects. We focus on the influence of macroscopic defects on photoluminescence (PL) of GaN/InGaN multiple quantum well (MQW) structures and present a Raman spectroscopy study of these regions. Some GaN and InGaN/GaN samples exhibit large dark areas with PL decreasing by several orders of magnitude, in the centre of which is a structural defect. Traces of iron, stainless steel or oxides of iron were detected in majority of studied large dark areas by SEM microscopy with EDX and Raman spectroscopy.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů