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Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00537993" target="_blank" >RIV/68378271:_____/20:00537993 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Impact of macroscopic particle composition on GaN epitaxial growth morphology and luminescence

  • Original language description

    We describe macroscopic defects on InGaN/GaN multiple quantum well structures caused by accidental contamination with dust particles during the metalorganic vapour phase epitaxy. Gallium nitride and InGaN/GaN heterostructures are promising materials for many optoelectronic devices. During the preparation of these structures, great attention is paid to optimization of the growth parameters and to reduce the density of dislocations and point defects in this material. However, only a small number of studies were performed on macroscopic defects. Understanding the impact of each of the contaminating elements is not only important for sample diagnostics, but it also provides insight into the complex physical and chemical processes during epitaxy.We focus on the influence of macroscopic defects on photoluminescence of GaN/InGaN multiple quantum well structures and present a Raman spectroscopy study of macroscopic defect containing regions of the samples.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    20th Conference of Czech and Slovak Physicists Proceedings

  • ISBN

    978-80-89855-13-1

  • ISSN

  • e-ISSN

  • Number of pages

    2

  • Pages from-to

    89-90

  • Publisher name

    Slovak Physical Society, Czech Physical Society

  • Place of publication

    Košice

  • Event location

    Prague

  • Event date

    Sep 7, 2020

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article