Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496161" target="_blank" >RIV/68378271:_____/18:00496161 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Effect of dust contamination on GaN/InGaN multiple quantum well growth morphology

Original language description

We report about macroscopic defects from InGaN/GaN multiple quantum well structures caused by unintended contamination of dust particles during the metalorganic vapour phase epitaxy. These structures are developed for use as fast scintillators and detectors of ionizing radiation, where extremely low intensity of excitation should be expected, and thus high demands on cleanliness must be required. On some of our samples, we found defects hundreds of μm in size with different types of changes in their epitaxial morphology and with different modifications in their physical properties. Using EDX in an electron microscope, particles of different elemental composition (e.g. Fe, Cr, Ni, Ca, Si) have been identified in the centre of the defects. We will present cathodoluminescence, PL and Raman spectra in surroundings of different defects and discuss the influence of the contamination.n

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů