Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00542725" target="_blank" >RIV/68378271:_____/21:00542725 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/21:00353798
Result on the web
<a href="http://hdl.handle.net/11104/0320090" target="_blank" >http://hdl.handle.net/11104/0320090</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jlumin.2021.118127" target="_blank" >10.1016/j.jlumin.2021.118127</a>

Result language
angličtina
Original language name
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
Original language description
Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)