A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010354" target="_blank" >RIV/46747885:24220/20:00010354 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/20:00532847 RIV/68407700:21340/20:00345113 RIV/00216208:11320/20:10423669
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2020.125579" target="_blank" >10.1016/j.jcrysgro.2020.125579</a>

Result language
angličtina
Original language name
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures
Original language description
This work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of gallium originate dominantly in GaN buffer layers grown at higher temperatures in H-2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of gallium vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them. Understanding the mechanism why the luminescence efficiency is suppressed in deeper QWs may be very important for LED community and can help to develop new improved technologies for the growth of InGaN/GaN MQW active region.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20500 - Materials engineering

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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