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A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010354" target="_blank" >RIV/46747885:24220/20:00010354 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/20:00532847 RIV/68407700:21340/20:00345113 RIV/00216208:11320/20:10423669

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2020.125579" target="_blank" >10.1016/j.jcrysgro.2020.125579</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

  • Original language description

    This work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of gallium originate dominantly in GaN buffer layers grown at higher temperatures in H-2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of gallium vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them. Understanding the mechanism why the luminescence efficiency is suppressed in deeper QWs may be very important for LED community and can help to develop new improved technologies for the growth of InGaN/GaN MQW active region.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20500 - Materials engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Crystal Growth

  • ISSN

    0022-0248

  • e-ISSN

  • Volume of the periodical

    536

  • Issue of the periodical within the volume

    APR

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

  • UT code for WoS article

    000520838100001

  • EID of the result in the Scopus database

    2-s2.0-85080922153