Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520830" target="_blank" >RIV/68378271:_____/19:00520830 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits

Original language description

Luminescence and morphology properties of thick InGaN/GaN multi-quantum well (MQW) heterostructures were investigated. Five samples with number of InGaN/GaN quantum wells (QWs) from 10 to 60 were prepared to achieve a thick active MQW layer. The increasing QWs number leads to accumulation of strain in InGaN/GaN layers and opening of new V-pits due to strain relaxation. The ratio between surfaces of the V-pits’ semipolar QWs and c-plane QWs is increasing because of the growing size and number of V-pits. The consequence is a nearly linear luminescence redshift of the upper c-plane QWs caused probably by increased QW thickness due to lateral migration of In atoms from semipolar to c-plane QWs and also decreasing photoluminescence (PL) intensity of upper QWs for QW number above 30.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/LO1603" target="_blank" >LO1603: Centre of Technology and Advanced Structure Analysis of Materials with Application Impact</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů