MOVPE growth of InGaN/GaN MQW nitride scintillator structure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00479290" target="_blank" >RIV/68378271:_____/17:00479290 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

MOVPE growth of InGaN/GaN MQW nitride scintillator structure

Original language description

Fast scintillators with decay time of few nanoseconds are necessary for scanning electron microscopes in inspection machines in electronic industry. Serious morphological problem of the InGaN/GaN MQWs is formation of V-pits. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and different thickness of GaN covering layers were grown, measured by AFM and their photoluminescence (PL) properties were compared. V-pit size (depth and diameter) depends on the total thickness of InGaN layers and on the growth rate, not on the capping layer thickness. Fast exciton QW PL can be increased by the thickness of GaN capping layer, higher In content and lower growth rate of the capping layer.n

Czech name

—

Czech description

—

Type

O - Miscellaneous

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů