Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00502838" target="_blank" >RIV/68378271:_____/19:00502838 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >10.1016/j.jcrysgro.2018.11.038</a>
Alternative languages
Result language
angličtina
Original language name
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
Original language description
This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.n
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
507
Issue of the periodical within the volume
Feb
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
6
Pages from-to
310-315
UT code for WoS article
000455667500051
EID of the result in the Scopus database
2-s2.0-85057811376