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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00502838" target="_blank" >RIV/68378271:_____/19:00502838 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >10.1016/j.jcrysgro.2018.11.038</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

  • Original language description

    This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.n

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Crystal Growth

  • ISSN

    0022-0248

  • e-ISSN

  • Volume of the periodical

    507

  • Issue of the periodical within the volume

    Feb

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    6

  • Pages from-to

    310-315

  • UT code for WoS article

    000455667500051

  • EID of the result in the Scopus database

    2-s2.0-85057811376