Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00502822" target="_blank" >RIV/68378271:_____/19:00502822 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013" target="_blank" >10.1016/j.jcrysgro.2018.10.013</a>

Result language
angličtina
Original language name
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties
Original language description
In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum well (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. We show that the dominant influence of Si doping is in modification of the tilt of the band structure. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Proper Si doping position for particular applications is suggested. In the case of LED structures, the n-type buffer layer and p-type capping layer help improve the emission efficiency. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum.n
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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