Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536309" target="_blank" >RIV/68378271:_____/20:00536309 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/20:00345115
Result on the web
<a href="https://doi.org/10.1109/TNS.2020.2985666" target="_blank" >https://doi.org/10.1109/TNS.2020.2985666</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TNS.2020.2985666" target="_blank" >10.1109/TNS.2020.2985666</a>
Alternative languages
Result language
angličtina
Original language name
Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates
Original language description
A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Nuclear Science
ISSN
0018-9499
e-ISSN
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Volume of the periodical
67
Issue of the periodical within the volume
6
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
974-977
UT code for WoS article
000545005000019
EID of the result in the Scopus database
2-s2.0-85087155542