Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00502374" target="_blank" >RIV/68378271:_____/18:00502374 - isvavai.cz</a>
Result on the web
<a href="https://kiplwww.fjfi.cvut.cz/drupal7/sites/default/files/Sbornik_SSCSSPM8_2018_FinalPublished_compressed.pdf" target="_blank" >https://kiplwww.fjfi.cvut.cz/drupal7/sites/default/files/Sbornik_SSCSSPM8_2018_FinalPublished_compressed.pdf</a>
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
Original language description
Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.n
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 8th Student scientific conference of solid state engineering and materials
ISBN
978-80-01-06511-2
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
42-45
Publisher name
České vysoké učení technické v Praze
Place of publication
Praha
Event location
Sedliště
Event date
Sep 17, 2018
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
—