Investigation of GaN thin films by electrically detected magnetic resonance and luminescence techniques

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00549953" target="_blank" >RIV/68378271:_____/21:00549953 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Investigation of GaN thin films by electrically detected magnetic resonance and luminescence techniques

Original language description

To have better insight into the energy transfer and defect creation processes occurring in the InGaN/GaN multiple quantum well (MQW) structures the detailed study of the Si-doped (18 ppm) GaN epitaxial layers in comparison with undoped GaN prepared by metal-organic vapor phase epitaxy (MOVPE) technology is proposed. It has been found that the Si doping plays significant role in the position and intensity level of the exciton and defect emission. Moreover, the Si doping resulted in passivation of defects.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GJ20-05497Y" target="_blank" >GJ20-05497Y: Nanoscintillators based on ultrafast luminescent multiple quantum well structures and composites</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2021

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of ADEPT - ADEPT 2021

ISBN

978-80-554-1806-3

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

41-44

Publisher name

University of Žilina

Place of publication

Žilina

Event location

Podbanské

Event date

Sep 20, 2021

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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