Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00567278" target="_blank" >RIV/68378271:_____/22:00567278 - isvavai.cz</a>
Result on the web
<a href="https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001" target="_blank" >https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/2413/1/012001" target="_blank" >10.1088/1742-6596/2413/1/012001</a>

Result language
angličtina
Original language name
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells
Original language description
The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained.
Czech name
—
Czech description
—

Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GJ20-05497Y" target="_blank" >GJ20-05497Y: Nanoscintillators based on ultrafast luminescent multiple quantum well structures and composites</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)