The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00561462" target="_blank" >RIV/68378271:_____/22:00561462 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.radmeas.2022.106842" target="_blank" >https://doi.org/10.1016/j.radmeas.2022.106842</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.radmeas.2022.106842" target="_blank" >10.1016/j.radmeas.2022.106842</a>

Result language
angličtina
Original language name
The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study
Original language description
Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si were studied by means of radio-, photo- and thermally stimulated luminescence, scintillation decay kinetics, as well as electron paramagnetic resonance. Two luminescence bands were observed: the narrow and fast peaking at about 3.45 eV (ascribed to excitons) and the broad and slow one having maximum at about 2.2 eV (produced by the defect – a carbon occupying nitrogen site). The decay time and the intensity of exciton and defect-related emission exhibit dependence on the doping level of Si. Both bands are getting faster upon the increased Si content. Interestingly, the effect of Si on the conductivity properties of the GaN samples was observed by means of electron paramagnetic resonance.
Czech name
—
Czech description
—

Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GJ20-05497Y" target="_blank" >GJ20-05497Y: Nanoscintillators based on ultrafast luminescent multiple quantum well structures and composites</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)