Optical properties of epitaxially grown GaN:Ge thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00564769" target="_blank" >RIV/68378271:_____/22:00564769 - isvavai.cz</a>
Result on the web
<a href="https://hdl.handle.net/11104/0336364" target="_blank" >https://hdl.handle.net/11104/0336364</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.omx.2022.100211" target="_blank" >10.1016/j.omx.2022.100211</a>

Result language
angličtina
Original language name
Optical properties of epitaxially grown GaN:Ge thin films
Original language description
To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted. This study includes the measurements of radioluminescence and photoluminescence spectra, thermally stimulated luminescence as well as scintillation decay kinetics. The representative radio- and photoluminescence spectra are composed of two bands. The narrow and fast band peaking at about 3.4 eV is ascribed to excitons and the broad and slow defect-related band with the maximum at about 2.2 eV is produced by carbon occupying nitrogen site. It has been found that the decay kinetics and amplitude of the exciton and defect emission are sensitive to the Ge doping level. In particular, the exciton- and the defect-related luminescence become faster with increasing Ge content. Charge trapping processes were also affected by the Ge doping.n
Czech name
—
Czech description
—

Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)